? 2005 ixys all rights reserved v ces = 900 v i c25 = 64 a v ce(sat) = 2.7 v t fi typ = 150 ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces t j = 25 c50 a v ge = 0 v t j = 150 c 750 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c110 , v ge = 15 v 2.2 2.7 v t j = 125 c 2.1 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 900 v v cgr t j = 25 c to 150 c; r ge = 1 m 900 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 64 a i c110 t c = 110 c32a i cm t c = 25 c, 1 ms 200 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 i cm = 64 a (rbsoa) clamped inductive load @ 600v p c t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s plastic body for 10 s 260 c m d mounting torque (to-247) 1.13/10nm/lb.in. weight to-247 6 g to-268 4 g ds99384(12/05) g = gate, c = collector, e = emitter, tab = collector features z high frequency igbt z high current handling capability z mos gate turn-on - drive simplicity applications z pfc circuits z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers advantages z high power density z very fast switching speeds for high frequency applications hiperfast tm igbt ixgh 32n90b2 ixgt 32n90b2 to-268 (ixgt) to-247 (ixgh) e g b2-class high speed igbts advance technical information c (tab) g c e c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 32n90b2 ixgt 32n90b2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c110 a; v ce = 10 v, 18 28 s pulse test, t 300 s, duty cycle 2 % c ies 1790 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 121 pf c res 49 pf q g 89 nc q ge i c = i c110 , v ge = 15 v, v ce = 0.5 v ces 15 nc q gc 34 nc t d(on) 20 ns t ri 22 ns t d(off) 260 400 ns t fi 150 ns e off 2.6 4.5 mj t d(on) 20 ns t ri 22 ns e on 0.5 mj note 1 3.8 mj t d(off) 360 ns t fi 330 ns e off 5.75 mj r thjc 0.42 k/w r thcs (to-247) 0.25 k/w inductive load, t j = 25 c i c = i c110 , v ge = 15 v v ce = 720 v, r g = r off = 5 inductive load, t j = 125 c i c = i c110 a, v ge = 15 v v ce = 720 v, r g = r off = 5 to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-268 outline min. recommended footprint (dimensions in inches and mm) note 1: e on measured with a dsep 30-12a ultrafast diode clamp. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2
? 2005 ixys all rights reserved fig. 2. extended output characteris tics @ 25 o c 0 40 80 120 160 200 240 0 2 4 6 8 101214161820 v c e - volts i c - amperes v ge = 15v 7v 9v 11v 13v fig. 3. output characte ristics @ 125 o c 0 10 20 30 40 50 60 70 00.511.522.533.544.5 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v c e - volts i c - amperes v ge = 15v 13v 11v 9v 5v 7v fig. 4. dependence of v ce(sat) on temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (sat) - normalized i c = 32a i c = 16a v ge = 15v i c = 64a fig. 5. collector-to-em itte r voltage vs. gate-to-em itter voltage 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6 7 8 9 10 11 12 13 14 15 16 17 v g e - volts v c e - volts t j = 25 o c i c = 64a 32a 16a fig. 6. input admittance 0 20 40 60 80 100 120 140 45 678 910 v g e - volts i c - amperes t j = 125 o c 25 o c -40 o c ixgh 32n90b2 ixgt 32n90b2
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 32n90b2 ixgt 32n90b2 fig. 7. transconductance 0 5 10 15 20 25 30 35 0 20 40 60 80 100 i c - amperes g f s - siemens t j = -40 o c 25 o c 12 5 o c fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090100 q g - nanocoulombs v g e - volts v ce = 450v i c = 32a i g = 1 0ma fig. 9. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 10. re ve r s e - bias saf e operating area 0 10 20 30 40 50 60 70 100 200 300 400 500 600 700 800 900 v c e - volts i c - amperes t j = 125 o c r g = 10 dv/dt < 10v/ns fig. 11. maximum transient thermal resistance 0.01 0.1 1 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
? 2005 ixys all rights reserved ixgh 32n90b2 ixgt 32n90b2 fig. 14. dependence of turn-off energy loss on collector current 0 2 4 6 8 10 12 14 16 10 20 30 40 50 60 70 i c - amperes e o f f - millijoules r g = 5 v ge = 15v v ce = 720v t j = 125 o c t j = 25 o c fig. 16. dependence of turn-off energy loss on temperature 0 2 4 6 8 10 12 14 16 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e o f f - millijoules i c = 64a r g = 5 v ge = 15v v ce = 720v i c = 32a i c = 16a fig. 12. dependence of turn-off energy loss on gate resistance 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 35 40 45 50 r g - ohms e o f f - millijoules i c = 64a t j = 125 o c v ge = 15v v ce = 720v i c = 32a i c = 16a fig. 13. dependence of turn-on energy loss on gate resistance 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 r g - ohms e o n - millijoules i c = 64a t j = 125 o c v ge = 15v v ce = 720v i c = 32a i c = 16a fig. 15. dependence of turn-on energy loss on collector current 0 1 2 3 4 5 6 7 8 9 10 20 30 40 50 60 70 i c - amperes e o n - millijoules r g = 5 v ge = 15v v ce = 720v t j = 125 o c t j = 25 o c fig. 17. dependence of turn-on energy loss on temperature 0 1 2 3 4 5 6 7 8 9 10 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e o n - millijoules i c = 64a r g = 5 ? v ge = 15v v ce = 720v i c = 32a i c = 16a
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 32n90b2 ixgt 32n90b2 fig. 18. dependence of turn-off sw itching time on gate resistance 350 375 400 425 450 475 500 525 550 46 81 012141 61 820 r g - ohms t d ( o f f ) - nanoseconds 320 330 340 350 360 370 380 390 400 t f i - nanoseconds t d(off) t fi - - - - - t j = 125oc, v ge = 15v v ce = 720v i c = 32a, 16a i c = 16a, 32a, 64a fig. 20. dependence of turn-off sw itching tim e on collector current 100 150 200 250 300 350 400 450 500 15 20 25 30 35 40 45 50 55 60 65 i c - amperes t d ( o f f ) / t f i - nanoseconds t d(off) t fi - - - - - r g = 5 , v ge = 15v v ce = 720v t j = 125 o c t j = 25 o c fig. 22. dependence of turn-off sw itching time on temperature 100 150 200 250 300 350 400 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t d ( o f f ) / t f i - nanoseconds t d( off) t fi - - - - - r g = 5 , v ge = 15v v ce = 720v i c = 64a, 32a, 16a i c = 64a, 32a, 16a fig. 19. dependence of turn-on sw itching time on gate resistance 1 5 20 25 30 35 40 45 46810121 41 61 820 r g - ohms t d ( o n ) - nanoseconds 0 30 60 90 1 20 1 50 1 80 t r i - nanoseconds t d( on) t ri - - - - - t j = 125oc, v ge = 15v v ce = 720v i c = 32a i c = 16a i c = 64a fig. 21. dependence of turn-on switching time on collector current 10 12 14 16 18 20 22 24 26 28 30 10 20 30 40 50 60 70 i c - amperes t d ( o n ) - nanoseconds 0 10 20 30 40 50 60 70 80 90 10 0 t r i - nanoseconds t d(on) t ri - - - - r g = 5 , v ge = 15v v ce = 720v t j = 125 o c t j = 25 o c fig. 23. dependence of turn-on sw itching time on temperature 10 15 20 25 30 35 40 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t d ( o n ) - nanoseconds 0 25 50 75 1 00 1 25 1 50 t r i - nanoseconds t d(on) t ri - - - - - r g = 5 , v ge = 15v v ce = 720v i c = 32a i c = 64a i c = 1 6a
? 2005 ixys all rights reserved advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
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